Volume pricing
- 1+ pcs$10.82
- 10+ pcs$10.21
- 100+ pcs$9.63
- 500+ pcs$9.09
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Configuration
- Single
- Gate Charge
- 325 nC
- Ambalaj
- Tube
- Continuous Collector Current
- 107
- Minimum Operating Temperature
- - 55 C
- Ürün Durumu
- Active
- Power Max
- 366 W
- Current Collector Pulsed Icm
- 150 A
- Montaj Tipi
- Through Hole
- Currentcollector Ic Max
- 107 A
- Pd Power Dissipation
- 366 W
- Montaj Stili
- Through Hole
- Maks. Çalışma Sıcaklığı
- + 175 C
- Switching Energy
- 1.185mJ (on), 1.565mJ (off)
- Igbt Type
- Trench Field Stop
- Continuous Collector Current At25 C
- 107 A
- RoHS
- Details
- Technology
- Si
- Vceon Max Vge Ic
- 1.85V @ 15V, 50A
- Tedarikçi Cihaz Paketi
- TO-247-3
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
- Paket
- Tube
- Reverse Recovery Time Trr
- 35 ns
- Temel Ürün No
- APT50GN60
- Collector Emitter Voltage Vceo Max
- 600 V
- Gateemitter Leakage Current
- 600 nA
- Power Dissipation
- 366
- Voltage Collector Emitter Breakdown Max
- 600 V
- Giriş Tipi
- Standard
- Td Onoff25c
- 20ns/230ns
- Maximum Gate Emitter Voltage
- - 30 V, + 30 V
- Ürün Tipi
- IGBT Transistors
- Fabrika Paket Adedi
- 1
- Kılıf / Paket
- TO-247-3
- Collectoremitter Saturation Voltage
- 1.45 V
- Test Conditions
- 400V, 50A, 4.3Ohm, 15V
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