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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tedarikçi Cihaz Paketi
- TO-247 [B]
- Giriş Tipi
- Standard
- Maks. Çalışma Sıcaklığı
- 150 °C
- Ürün Durumu
- Active
- Ürün Tipi
- IGBT Transistors
- Collectoremitter Breakdown Voltage
- 1.2 kV
- Power Max
- 417 W
- Min. Çalışma Sıcaklığı
- -55 °C
- Technology
- Si
- Montaj
- Through Hole
- Temel Ürün No
- APT25GP120
- Element Configuration
- Single
- Montaj Tipi
- Through Hole
- Current Collector Pulsed Icm
- 90 A
- Collector Emitter Voltage Vceo
- 1.2 kV
- Voltage Rating Dc
- 1.2 kV
- Fabrika Paket Adedi
- 1
- Seri
- POWER MOS 7®
- Td Onoff25c
- 12ns/70ns
- RoHS
- Details
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Radyasyon Dayanımı
- No
- Ambalaj
- Tube
- Paket
- Tube
- Igbt Type
- PT
- Kurşunsuz
- Lead Free
- Maximum Gate Emitter Voltage
- - 20 V, + 20 V
- Switching Energy
- 500µJ (on), 438µJ (off)
- Max Collector Current
- 69 A
- Test Conditions
- 600V, 25A, 5Ohm, 15V
- Kılıf / Paket
- TO-247-3
- Currentcollector Ic Max
- 69 A
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Üretici Parça No
- ACH550-PCR-368A-4+B055+L512
- Vceon Max Vge Ic
- 3.9V @ 15V, 25A
- Max Power Dissipation
- 417 W
- Voltage Collector Emitter Breakdown Max
- 1200 V
- Gate Charge
- 110 nC
- Akım Değeri
- 69 A
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