MMQ60R190PTH

Specifications

Gate To Source Voltage Vgs

30 V

Supplier Package

TO-247

Pin Sayısı

3

Channel Type

N

Maximum Gate Source Leakage Current Na

100

Typical Gate Charge Vgs Nc

51@10V

Typical Input Capacitance Vds Pf

1630@25V

Uzunluk

16.26 mm

Maximum Operating Temperature C

150

Max Power Dissipation

154 W

Turn On Delay Time

32 ns

REACH Uyumluluk Kodu

unknown

Maximum Gate Threshold Voltage V

4

Min. Çalışma Sıcaklığı

-55 °C

Drain To Source Resistance

190 mΩ

Channel Mode

Enhancement

Eu Rohs

Compliant

Automotive

Unknown

Ppap

Unknown

Parça Durumu

Unconfirmed

Typical Fall Time Ns

47

Genişlik

5.31 mm

Process Technology

Super Junction

Package Width

5.31(Max)

Maximum Drain Source Resistance Mohm

190@10V

Mounting

Through Hole

RoHS

Non-Compliant

Typical Turnon Delay Time Ns

32

Element Configuration

Single

Pcb Changed

3

Part Life Cycle Code

Active

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Package Length

16.26(Max)

Ambalaj

Tube

Maximum Drain Source Voltage V

600

Tab

Tab

Package Description

,

Eccn Us

EAR99

Maximum Gate Source Voltage V

±30

Configuration

Single