MMIS70R1K4PTH

Specifications

Maximum Gate Source Leakage Current Na

100

Typical Gate Charge Vgs Nc

11@10V

Package Height

6.22(Max)

Mounting

Through Hole

Package Width

2.39(Max)

Typical Turnoff Delay Time Ns

33

Eccn Us

EAR99

Package Length

6.73(Max)

Process Technology

Super Junction

Maximum Drain Source Resistance Mohm

1400@10V

Category

Power MOSFET

Supplier Package

IPAK

Ambalaj

Tube

Typical Rise Time Ns

20

Pin Sayısı

3

Maximum Gate Source Voltage V

±30

Number Of Elements Per Chip

1

Pcb Changed

3

Maximum Continuous Drain Current A

3.2

Configuration

Single

Channel Mode

Enhancement

Ppap

Unknown

Typical Turnon Delay Time Ns

9

Maximum Drain Source Voltage V

700

Parça Durumu

Active

Minimum Operating Temperature C

-55

Maximum Idss Ua

1

Typical Fall Time Ns

21

Tab

Tab

Typical Gate Charge10v Nc

11

Maximum Operating Temperature C

150

Maximum Power Dissipation Mw

33000

Maximum Gate Threshold Voltage V

4

Automotive

Unknown

Standard Package Name

TO-251

Channel Type

N

Typical Input Capacitance Vds Pf

312@25V

Lead Shape

Through Hole