MDV1525URH

Specifications

Maximum Gate Source Leakage Current Na

100

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Process Technology

TMOS

Channel Type

N

Supplier Package

Power DFN EP

Yüzey Montaj

YES

RoHS

Non-Compliant

Package Length

3.2(Max)

Typical Rise Time Ns

11.8

Risk Rank

1.73

Eu Rohs

Compliant

Terminal Formu

FLAT

Drain Currentmax Id

24 A

Rohs Code

Yes

Standard Package Name

DFN

Typical Turnoff Delay Time Ns

20

Package Shape

SQUARE

Automotive

Unknown

Ppap

Unknown

Ds Breakdown Voltagemin

30 V

Typical Gate Charge10v Nc

12.6

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

S-PDSO-F5

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

10.1@10V

Typical Gate Charge Vgs Nc

12.6@10V|6@4.5V

Configuration

Single Quad Drain Triple Source

Pcb Changed

8

Maximum Operating Temperature C

150

Package Height

0.75(Max)

Reflow Temperaturemax S

NOT SPECIFIED

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

3400

Ambalaj

Tape and Reel

Typical Input Capacitance Vds Pf

811@15V

Maximum Idss Ua

1

Part Life Cycle Code

Active

Transistor Element Material

SILICON

Schedule B

8541290080/8541290080/8541290080/8541290080/8541290080

Polaritychannel Type

N-CHANNEL