MDP1923TH

Specifications

Genişlik

4.83 mm

Package Height

9.65(Max)

Hts

8541.29.00.95

Eu Rohs

Compliant

Maks. Çalışma Sıcaklığı

150 °C

Part Life Cycle Code

Active

Standard Package Name

TO-220

Ppap

Unknown

Reflow Temperaturemax S

NOT SPECIFIED

Pcb Changed

3

Continuous Drain Current Id

69 A

Maximum Drain Source Voltage V

100

Typical Rise Time Ns

10.1

Typical Gate Charge10v Nc

42.8

Gate To Source Voltage Vgs

20 V

Ambalaj

Tube

Eccn Us

EAR99

Min. Çalışma Sıcaklığı

-55 °C

Pin Sayısı

3

Configuration

Single

Number Of Elements Per Chip

1

Process Technology

TMOS

Maximum Drain Source Resistance Mohm

13.9@10V

Pin Sayısı

3

Package Width

4.83(Max)

Channel Type

N

Risk Rank

5.74

Montaj

Through Hole

Maximum Gate Source Leakage Current Na

100

Maximum Gate Threshold Voltage V

4

Typical Input Capacitance Vds Pf

2802@40V

Typical Turnon Delay Time Ns

10.6

Üretici Parça No

MDP1923TH

Element Configuration

Single

Yükseklik

16.51 mm

Typical Gate Charge Vgs Nc

42.8@10V

Package Description

,

Maximum Idss Ua

1

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Max Power Dissipation

139 W