MDP10N60GTH

Specifications

Drain To Source Resistance

700 mΩ

Typical Turnoff Delay Time Ns

116

Max Power Dissipation

156 W

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Maximum Idss Ua

1

Package Description

,

Typical Gate Charge Vgs Nc

32@10V

Yükseklik

16.51 mm

Element Configuration

Single

Üretici Parça No

MDP10N60GTH

Typical Turnon Delay Time Ns

53

Uzunluk

10.67 mm

Maximum Gate Source Voltage V

±30

Typical Fall Time Ns

32

Rohs Code

Yes

Parça Durumu

Unconfirmed

Input Capacitance

1.36 nF

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Minimum Operating Temperature C

-55

Automotive

Unknown

RoHS

Non-Compliant

Maximum Operating Temperature C

150

Turn Off Delay Time

116 ns

Turn On Delay Time

53 ns

Package Length

10.67(Max)

Mounting

Through Hole

Maximum Continuous Drain Current A

10

Tab

Tab

Supplier Package

TO-220

Channel Mode

Enhancement

Maximum Power Dissipation Mw

156000

Category

Power MOSFET

REACH Uyumluluk Kodu

unknown

Package Height

9.4(Max)

Genişlik

4.83 mm

Maximum Drain Source Voltage V

600

Continuous Drain Current Id

10 A

Pcb Changed

3

Reflow Temperaturemax S

NOT SPECIFIED

Ppap

Unknown