MDIS1501TH

Specifications

Pin Sayısı

3

Typical Gate Charge Vgs Nc

20.7@10V|10.1@4.5V

Eu Rohs

Compliant

Ppap

Unknown

Configuration

Single

Mounting

Through Hole

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Package Height

6.22(Max)

Maximum Idss Ua

1

Channel Mode

Enhancement

Üretici Parça No

MDIS1501TH

Typical Turnoff Delay Time Ns

29.5

Maximum Power Dissipation Mw

6200

Maximum Gate Source Voltage V

±20

Standard Package Name

TO-251

Eccn Us

EAR99

Pcb Changed

3

Category

Power MOSFET

Supplier Package

IPAK

Maximum Continuous Drain Current A

25.1

Part Life Cycle Code

Active

Minimum Operating Temperature C

-55

Process Technology

TMOS

Typical Rise Time Ns

12.2

Maximum Gate Threshold Voltage V

2.7

Number Of Elements Per Chip

1

Reflow Temperaturemax S

NOT SPECIFIED

Typical Fall Time Ns

8.6

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

5.6@10V

Tab

Tab

Ambalaj

Tube

Hts

8541.29.00.95

Package Width

2.39(Max)

Package Description

,

Maximum Drain Source Voltage V

30

Maximum Operating Temperature C

150

Package Length

6.73(Max)

Risk Rank

5.73