MDI6N65BTH

Specifications

Maximum Gate Source Voltage V

±30

Maximum Power Dissipation Mw

119000

Typical Gate Charge10v Nc

15.8

Typical Turnoff Delay Time Ns

56

Package Length

6.73(Max)

Standard Package Name

TO-251

Typical Turnon Delay Time Ns

16

Channel Type

N

Package Width

2.39(Max)

Maximum Drain Source Voltage V

650

Channel Mode

Enhancement

Maximum Operating Temperature C

150

Maximum Idss Ua

1

Package Height

6.1

Maximum Gate Source Leakage Current Na

100

Typical Rise Time Ns

26

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

752@25V

Maximum Gate Threshold Voltage V

4

Number Of Elements Per Chip

1

Supplier Package

TO-251

Maximum Continuous Drain Current A

5.7

Eccn Us

EAR99

Pcb Changed

3

Category

Power MOSFET

Lead Shape

Through Hole

Automotive

Unknown

Typical Gate Charge Vgs Nc

15.8@10V

Parça Durumu

Obsolete

Eu Rohs

Compliant

Tab

Tab

Maximum Drain Source Resistance Mohm

1450@10V

Typical Fall Time Ns

30

Pin Sayısı

3

Ambalaj

Tube

Ppap

Unknown

Configuration

Single

Hts

8541.29.00.95

Mounting

Through Hole