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C3 ChipZentronix

MagnaChip

MDF1933TH

MOSFETs Transistors Arrays

RoHS: Compliant

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Compliant

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Specifications

Lead Shape
Through Hole
Typical Input Capacitance Vds Pf
3841@40V
Maximum Gate Source Leakage Current Na
100
Number Of Elements Per Chip
1
Typical Turnoff Delay Time Ns
24.2
Package Width
4.93(Max)
Maximum Operating Temperature C
150
Supplier Package
TO-220F
Typical Fall Time Ns
15.1
Typical Gate Charge10v Nc
59.4
Package Height
16.13(Max)
Tab
Tab
Maximum Drain Source Voltage V
80
Maximum Continuous Drain Current A
43
Mounting
Through Hole
Material
Si
Maximum Drain Source Resistance Mohm
7.5@10V
Standard Package Name
TO-220
Typical Gate Charge Vgs Nc
59.4@10V
Process Technology
TMOS
Parça Durumu
Unconfirmed
Pin Sayısı
3
Channel Mode
Enhancement
Pcb Changed
3
Minimum Operating Temperature C
-55
Package Length
10.71(Max)
Maximum Power Dissipation Mw
27700
Ppap
Unknown
Maximum Gate Source Voltage V
±20
Typical Rise Time Ns
32.7
Eu Rohs
Compliant
Channel Type
N
Typical Turnon Delay Time Ns
15.6
Maximum Gate Threshold Voltage V
4
Configuration
Single
Automotive
Unknown
Category
Power MOSFET
Ambalaj
Tube
Maximum Idss Ua
1
Eccn Us
EAR99

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