MDF1922TH

Specifications

Process Technology

TMOS

Channel Mode

Enhancement

Parça Durumu

Unconfirmed

Pin Sayısı

3

Minimum Operating Temperature C

-55

Pcb Changed

3

Package Length

10.71(Max)

Ppap

Unknown

Maximum Power Dissipation Mw

28000

Maximum Gate Source Voltage V

±20

Channel Type

N

Eu Rohs

Compliant

Typical Rise Time Ns

13

Typical Turnon Delay Time Ns

13.8

Maximum Gate Threshold Voltage V

4

Configuration

Single

Ambalaj

Tube

Automotive

Unknown

Category

Power MOSFET

Eccn Us

EAR99

Maximum Idss Ua

1

Lead Shape

Through Hole

Maximum Gate Source Leakage Current Na

100

Typical Input Capacitance Vds Pf

3500@40V

Number Of Elements Per Chip

1

Package Width

4.93(Max)

Typical Turnoff Delay Time Ns

39

Maximum Operating Temperature C

150

Supplier Package

TO-220F

Typical Gate Charge10v Nc

54.5

Typical Fall Time Ns

14

Package Height

16.13(Max)

Maximum Drain Source Voltage V

100

Maximum Continuous Drain Current A

40

Tab

Tab

Mounting

Through Hole

Hts

8541.29.00.95

Maximum Drain Source Resistance Mohm

8.7@10V

Standard Package Name

TO-220

Typical Gate Charge Vgs Nc

54.5@10V