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Specifications
- Continuous Drain Current Id
- 12 A
- Maximum Gate Source Leakage Current Na
- 100
- Number Of Elements Per Chip
- 1
- Schedule B
- 8541290080
- Typical Gate Charge10v Nc
- 8.8
- Mounting
- Through Hole
- Tab
- Tab
- Maximum Continuous Drain Current A
- 12
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Typical Gate Charge Vgs Nc
- 8.8@10V
- Standard Package Name
- TO-220
- Ihs Manufacturer
- MAGNACHIP SEMICONDUCTOR LTD
- Risk Rank
- 5.72
- Maximum Power Dissipation Mw
- 33800
- Ppap
- Unknown
- Package Length
- 10.36(Max)
- Maximum Gate Source Voltage V
- ±20
- Rohs Code
- Yes
- Part Life Cycle Code
- Active
- Channel Type
- N
- Number Of Elements
- 1
- Configuration
- Single
- REACH Uyumluluk Kodu
- unknown
- Maximum Gate Threshold Voltage V
- 3
- Typical Turnon Delay Time Ns
- 6.8
- Category
- Power MOSFET
- Automotive
- Unknown
- Typical Input Capacitance Vds Pf
- 475@25V
- Lead Shape
- Through Hole
- Gate To Source Voltage Vgs
- 20 V
- Reflow Temperaturemax S
- NOT SPECIFIED
- Typical Turnoff Delay Time Ns
- 16.2
- Package Width
- 4.7(Max)
- Üretici Parça No
- MDF1903TH
- Min. Çalışma Sıcaklığı
- -55 °C
- Supplier Package
- TO-220F
- Maks. Çalışma Sıcaklığı
- 150 °C
- Maximum Operating Temperature C
- 150
- Package Height
- 15.2(Max)
- Typical Fall Time Ns
- 5.5
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