Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Besleme Gerilimi
- 2.7V~3.6V
- Memory Format
- FLASH
- Alternate Memory Width
- 8
- Kurşunsuz
- Lead Free
- Tepe Reflow Süresi (maks. sn)
- 40
- Sector Size
- 128K
- Page Size
- 8/16words
- Common Flash Interface
- YES
- Programming Voltage
- 3V
- Access Time Max
- 100 ns
- Besleme Gerilimi
- 3.3V
- RoHS Durumu
- ROHS3 Compliant
- Fonksiyon Sayısı
- 1
- Pin Sayısı
- 56
- Write Cycle Time Word Page
- 100ns
- Ambalaj
- Tray
- Memory Width
- 16
- JESD-609 Kodu
- e3
- Toggle Bit
- YES
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Supply Voltagemin Vsup
- 3V
- Memory Types
- Non-Volatile
- Qualification Status
- Not Qualified
- Uzunluk
- 18.4mm
- Number Of Sectorssize
- 512
- Yüzey Montaj
- YES
- Standby Currentmax
- 0.00002A
- Fabrika Tedarik Süresi
- 16 Weeks
- Operating Mode
- ASYNCHRONOUS
- Memory Interface
- Parallel
- Power Supplies
- 3/3.3V
- Terminal Kaplaması
- Matte Tin (Sn)
- Kılıf / Paket
- 56-TFSOP (0.724, 18.40mm Width)
- Command User Interface
- YES
- Data Polling
- YES
- Maks. Oturma Yüksekliği
- 1.2mm
- Memory Size
- 512Mb 64M x 8
- Terminal Adımı
- 0.5mm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Çalışma Sıcaklığı
- -40°C~85°C TA
Related Products
Microchip Technology
11AA010-I/MS
Memory
Microchip Technology
11AA010-I/P
Memory
Microchip Technology
11AA010-I/SN
Memory
Microchip Technology
11AA010-I/TO
Memory
Microchip Technology
11AA010T-I/MNY
Memory
Microchip Technology
11AA010T-I/MS
Memory
Microchip Technology
11AA010T-I/SN
Memory
Microchip Technology
11AA010T-I/TT
Memory