
Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Besleme Gerilimi
- 3V
- Memory Width
- 4
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 8
- Memory Format
- FLASH
- Density
- 128 Mb
- Serial Bus Type
- SPI
- Jesd30 Code
- R-PDSO-N8
- Besleme Gerilimi
- 2.7V~3.6V
- Programming Voltage
- 3V
- Terminal Pozisyonu
- DUAL
- Qualification Status
- Not Qualified
- Seri
- MX25xxx35/36 - MXSMIO™
- Kılıf / Paket
- 8-WDFN Exposed Pad
- Fabrika Tedarik Süresi
- 16 Weeks
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Endurance
- 100000 Write/Erase Cycles
- Genişlik
- 5mm
- Clock Frequency
- 104MHz
- Write Protection
- HARDWARE/SOFTWARE
- Data Retention Timemin
- 20
- Ambalaj
- Tray
- Kurşunsuz
- Lead Free
- Power Supplies
- 3/3.3V
- Write Cycle Time Word Page
- 30μs, 1.5ms
- Yayın Yılı
- 2016
- Organization
- 32MX4
- Uzunluk
- 6mm
- Operating Mode
- SYNCHRONOUS
- Terminal Kaplaması
- Tin (Sn)
- Memory Size
- 128Mb 16M x 8
- Maks. Oturma Yüksekliği
- 0.8mm
- Operating Supply Voltage
- 3.6V
- Memory Interface
- SPI
- Supply Voltagemin Vsup
- 2.7V
- Çalışma Sıcaklığı
- -40°C~85°C TA
- Interface
- SPI, Serial
- Fonksiyon Sayısı
- 1
Related Products
Microchip Technology
11AA010-I/MS
Memory
Microchip Technology
11AA010-I/P
Memory
Microchip Technology
11AA010-I/SN
Memory
Microchip Technology
11AA010-I/TO
Memory
Microchip Technology
11AA010T-I/MNY
Memory
Microchip Technology
11AA010T-I/MS
Memory
Microchip Technology
11AA010T-I/SN
Memory
Microchip Technology
11AA010T-I/TT
Memory

