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PH3135-65M

M/A-Com Technology Solutions

PH3135-65M

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
RoHS Durumu
ROHS3 Compliant
Terminal Formu
FLAT
Yüzey Montaj
YES
Power Max
65W
Kurşunsuz Kodu
yes
Gain
8.23dB ~ 9.09dB
Kılıf / Paket
Metal
Polaritychannel Type
NPN
Collectoremitter Breakdown Voltage
65V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Qualification Status
Not Qualified
Case Connection
BASE
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Transistor Element Material
SILICON
Max Power Dissipation
65W
Fabrika Tedarik Süresi
28 Weeks
Parça Durumu
Active
Number Of Elements
1
Çalışma Sıcaklığı
200°C TJ
Pin Sayısı
2
Ambalaj
Tray
Yayın Yılı
2009
Transistor Application
AMPLIFIER
Configuration
SINGLE WITH BUILT-IN RESISTOR
Terminal Pozisyonu
DUAL
Terminal Sayısı
2
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Highest Frequency Band
S B
Collector Emitter Voltage Vceo
65V
Pin Sayısı
2
Max Collector Current
7.7A
Transistor Type
NPN

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