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PH3134-75S

RF BJT Transistors

RoHS: Compliant

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Specifications

Transistor Type
NPN
Max Collector Current
8.9A
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Collector Emitter Voltage Vceo
65V
Highest Frequency Band
S B
Terminal Sayısı
2
Terminal Pozisyonu
DUAL
Configuration
SINGLE
Transistor Application
AMPLIFIER
Montaj
Chassis Mount
Çalışma Sıcaklığı
200°C TJ
Pin Sayısı
2
Ambalaj
Bulk
Yayın Yılı
2009
Max Power Dissipation
75W
Parça Durumu
Obsolete
Number Of Elements
1
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Transistor Element Material
SILICON
Qualification Status
Not Qualified
Case Connection
BASE
Polaritychannel Type
NPN
Collectoremitter Breakdown Voltage
65V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Chassis Mount
Power Max
75W
Gain
7.5dB
Kurşunsuz Kodu
yes
Kılıf / Paket
Metal
Terminal Formu
FLAT
RoHS Durumu
RoHS Compliant
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED

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