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PH3134-55L

M/A-Com Technology Solutions

PH3134-55L

RF BJT Transistors

RoHS: Compliant

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Specifications

Terminal Formu
FLAT
Kılıf / Paket
Metal
Gain
7.5dB
Kurşunsuz Kodu
yes
Power Max
55W
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
RoHS Durumu
ROHS3 Compliant
Transistor Element Material
SILICON
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Number Of Elements
1
Max Power Dissipation
55W
Fabrika Tedarik Süresi
28 Weeks
Parça Durumu
Active
Montaj Tipi
Chassis Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
65V
Polaritychannel Type
NPN
Case Connection
BASE
Qualification Status
Not Qualified
Terminal Pozisyonu
DUAL
Configuration
SINGLE WITH BUILT-IN RESISTOR
Yayın Yılı
2009
Çalışma Sıcaklığı
200°C TJ
Pin Sayısı
2
Ambalaj
Tray
Montaj
Chassis Mount
Transistor Application
AMPLIFIER
Max Collector Current
6.5A
Pin Sayısı
2
Transistor Type
NPN
Terminal Sayısı
2
Collector Emitter Voltage Vceo
65V
Highest Frequency Band
S B
Additional Feature
WITH EMITTER BALLASTING RESISTORS

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