Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- NPN
- Pin Sayısı
- 2
- Max Collector Current
- 4A
- Additional Feature
- WITH EMITTER BALLASTING RESISTORS
- Collector Emitter Voltage Vceo
- 60V
- Terminal Sayısı
- 2
- Continuous Collector Current
- 4A
- Terminal Pozisyonu
- DUAL
- Transistor Application
- AMPLIFIER
- Montaj
- Chassis Mount, Screw
- Frekans
- 2.9GHz
- Çalışma Sıcaklığı
- 200°C TJ
- Pin Sayısı
- 3
- Ambalaj
- Tray
- Yayın Yılı
- 2009
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 70W
- Fabrika Tedarik Süresi
- 28 Weeks
- Parça Durumu
- Active
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Jesd30 Code
- S-CDFM-F2
- Case Connection
- BASE
- Polaritychannel Type
- NPN
- Collectoremitter Breakdown Voltage
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Chassis Mount
- Power Dissipation
- 70W
- Kurşunsuz Kodu
- yes
- Gain
- 9.2dB
- Kılıf / Paket
- Ceramic
- Terminal Formu
- FLAT
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Emitter Base Voltage Vebo
- 3V
Related Products
Microsemi Corporation
0204-125
RF BJT Transistors
Microsemi Corporation
0510-50A
RF BJT Transistors
HARTING
09022326834
RF BJT Transistors
HARTING
09023646919
RF BJT Transistors
HARTING
09030006246
RF BJT Transistors
HARTING
09030006247
RF BJT Transistors
HARTING
09031466903
RF BJT Transistors
HARTING
09032322850222
RF BJT Transistors