Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2009
- Highest Frequency Band
- L B
- Terminal Pozisyonu
- DUAL
- Terminal Sayısı
- 2
- Additional Feature
- WITH EMITTER BALLASTING RESISTORS
- Gain
- 10.70dB ~ 10.81dB
- Ambalaj
- Tray
- Transistor Application
- AMPLIFIER
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Breakdown Voltage
- 70V
- Montaj Tipi
- Chassis Mount
- Max Collector Current
- 6A
- Kurşunsuz Kodu
- yes
- Collector Emitter Voltage Vceo
- 70V
- Montaj
- Chassis Mount
- Qualification Status
- Not Qualified
- Transistor Type
- NPN
- Polaritychannel Type
- NPN
- Fabrika Tedarik Süresi
- 28 Weeks
- Case Connection
- BASE
- Number Of Elements
- 1
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Max Power Dissipation
- 75W
- Çalışma Sıcaklığı
- 200°C TJ
- Terminal Formu
- FLAT
- Pin Sayısı
- 2
- Configuration
- SINGLE
- Pin Sayısı
- 2
- Parça Durumu
- Active
- Kılıf / Paket
- Metal
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Power Max
- 75W
- RoHS Durumu
- ROHS3 Compliant
Related Products
Microsemi Corporation
0204-125
RF BJT Transistors
Microsemi Corporation
0510-50A
RF BJT Transistors
HARTING
09022326834
RF BJT Transistors
HARTING
09023646919
RF BJT Transistors
HARTING
09030006246
RF BJT Transistors
HARTING
09030006247
RF BJT Transistors
HARTING
09031466903
RF BJT Transistors
HARTING
09032322850222
RF BJT Transistors