Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 80V
- Montaj Tipi
- Chassis Mount
- Max Collector Current
- 28A
- Kurşunsuz Kodu
- yes
- Collectoremitter Breakdown Voltage
- 80V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- AMPLIFIER
- Ambalaj
- Tray
- Gain
- 8.06dB
- Additional Feature
- WITH EMITTER BALLASTING RESISTORS
- Terminal Sayısı
- 2
- Terminal Pozisyonu
- DUAL
- Emitter Base Voltage Vebo
- 3V
- Highest Frequency Band
- L B
- Yayın Yılı
- 2009
- Transistor Element Material
- SILICON
- Polaritychannel Type
- NPN
- Transistor Type
- NPN
- Radyasyon Dayanımı
- No
- Montaj
- Chassis Mount, Screw
- Pin Sayısı
- 3
- Terminal Formu
- FLAT
- Çalışma Sıcaklığı
- 200°C TJ
- Max Power Dissipation
- 550W
- Number Of Elements
- 1
- Power Dissipation
- 1.8kW
- Case Connection
- BASE
- Fabrika Tedarik Süresi
- 28 Weeks
- Jesd30 Code
- R-CDFM-F2
- RoHS Durumu
- ROHS3 Compliant
- Power Max
- 550W
- Kılıf / Paket
- Metal
- Parça Durumu
- Active
- Pin Sayısı
- 2
- Configuration
- SINGLE
Related Products
Microsemi Corporation
0204-125
RF BJT Transistors
Microsemi Corporation
0510-50A
RF BJT Transistors
HARTING
09022326834
RF BJT Transistors
HARTING
09023646919
RF BJT Transistors
HARTING
09030006246
RF BJT Transistors
HARTING
09030006247
RF BJT Transistors
HARTING
09031466903
RF BJT Transistors
HARTING
09032322850222
RF BJT Transistors