Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Emitter Base Voltage Vebo
- 3V
- Terminal Sayısı
- 2
- Terminal Pozisyonu
- DUAL
- Additional Feature
- WITH EMITTER BALLASTING RESISTORS
- Yayın Yılı
- 2006
- Transistor Element Material
- SILICON
- Collectoremitter Breakdown Voltage
- 80V
- Montaj Tipi
- Chassis Mount
- Max Collector Current
- 17A
- Kurşunsuz Kodu
- yes
- Collector Emitter Voltage Vceo
- 80V
- Gain
- 8.32dB
- Ambalaj
- Tray
- Transistor Application
- AMPLIFIER
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Type
- NPN
- Radyasyon Dayanımı
- No
- Montaj
- Chassis Mount, Screw
- Polaritychannel Type
- NPN
- Çalışma Sıcaklığı
- 200°C TJ
- Frekans
- 1.09GHz
- Fabrika Tedarik Süresi
- 28 Weeks
- Case Connection
- BASE
- Max Power Dissipation
- 350W
- Power Dissipation
- 750W
- Number Of Elements
- 1
- Continuous Collector Current
- 17A
- Pin Sayısı
- 3
- Terminal Formu
- FLAT
- Element Configuration
- Single
- Parça Durumu
- Active
- Pin Sayısı
- 2
- Kılıf / Paket
- Ceramic
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-CDFM-F2
Related Products
Microsemi Corporation
0204-125
RF BJT Transistors
Microsemi Corporation
0510-50A
RF BJT Transistors
HARTING
09022326834
RF BJT Transistors
HARTING
09023646919
RF BJT Transistors
HARTING
09030006246
RF BJT Transistors
HARTING
09030006247
RF BJT Transistors
HARTING
09031466903
RF BJT Transistors
HARTING
09032322850222
RF BJT Transistors