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PH1090-175L

M/A-Com Technology Solutions

PH1090-175L

RF BJT Transistors

RoHS: Compliant

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Specifications

Ambalaj
Tray
Gain
8.58dB
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Application
AMPLIFIER
Kurşunsuz Kodu
yes
Max Collector Current
10.5A
Montaj Tipi
Chassis Mount
Collectoremitter Breakdown Voltage
80V
Collector Emitter Voltage Vceo
80V
Transistor Element Material
SILICON
Yayın Yılı
2016
Terminal Pozisyonu
DUAL
Terminal Sayısı
2
Highest Frequency Band
L B
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Polaritychannel Type
NPN
Qualification Status
Not Qualified
Montaj
Chassis Mount
Transistor Type
NPN
Terminal Formu
FLAT
Pin Sayısı
3
Case Connection
BASE
Fabrika Tedarik Süresi
25 Weeks
Max Power Dissipation
188W
Number Of Elements
1
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Çalışma Sıcaklığı
200°C TJ
Power Max
188W
RoHS Durumu
ROHS3 Compliant
Jesd30 Code
R-CDFM-F2
Configuration
SINGLE
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Kılıf / Paket
Metal
Pin Sayısı
2
Parça Durumu
Active

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