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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drainsource On Resistancemax
- 0.5Ohm
- Parça Durumu
- Active
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Operating Temperature Min
- -40°C
- Transistor Element Material
- SILICON
- Configuration
- SINGLE
- Operating Temperature Max
- 85°C
- RoHS Durumu
- ROHS3 Compliant
- Transistor Type
- HEMT
- Fabrika Tedarik Süresi
- 2 Weeks
- Yüzey Montaj
- YES
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Yayın Yılı
- 2013
- Power Dissipation Ambientmax
- 28W
- Voltage Test
- 28V
- Current Test
- 200mA
- Fet Technology
- HIGH ELECTRON MOBILITY
- Case Connection
- SOURCE
- Number Of Elements
- 1
- Gain
- 14dB
- Ds Breakdown Voltagemin
- 100V
- Power Output
- 1.5W
- Terminal Pozisyonu
- DUAL
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Operating Mode
- DEPLETION MODE
- Terminal Sayısı
- 8
- Frekans
- 0Hz~3GHz
- Jesd30 Code
- R-PDSO-G8
- Polaritychannel Type
- N-CHANNEL
- Terminal Formu
- GULL WING
- Akım Değeri
- 5A
- Nominal Gerilim
- 100V
- Ambalaj
- Tube
- Additional Feature
- HIGH RELIABILITY
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