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MRF392

M/A-Com Technology Solutions

MRF392

RF BJT Transistors

RoHS: Compliant

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Specifications

Transistor Element Material
SILICON
Parça Durumu
Active
Polarity
NPN
Collector Emitter Voltage Vceo
30V
Montaj Tipi
Chassis Mount
Collectoremitter Breakdown Voltage
30V
Element Configuration
Dual
Max Power Dissipation
270W
Dc Current Gain Hfe Min Ic Vce
40 @ 1A 5V
Collector Base Voltage Vcbo
60V
Power Dissipation
270W
ECCN Kodu
EAR99
Kurşunsuz
Lead Free
Fabrika Tedarik Süresi
14 Weeks
Additional Feature
HIGH RELIABILITY
Transistor Application
AMPLIFIER
Montaj
Chassis Mount, Screw
Kurşunsuz Kodu
yes
Pin Sayısı
8
Hfemin
40
Pin Sayısı
8
Gain
10dB
Transistor Type
2 NPN (Dual) Common Emitter
Collectorbase Capacitancemax
95pF
Output Power
125W
Radyasyon Dayanımı
No
Frekans
500MHz
Çalışma Sıcaklığı
200°C TJ
Continuous Collector Current
16A
RoHS Durumu
ROHS3 Compliant
Kılıf / Paket
744A-01
Terminal Sayısı
8
Terminal Formu
FLAT
Max Collector Current
16A
Ambalaj
Tray
Number Of Elements
2
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
4V
Yayın Yılı
2009

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