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MRF314

M/A-Com Technology Solutions

MRF314

RF BJT Transistors

RoHS: Compliant

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Specifications

Power Dissipation
82W
ECCN Kodu
EAR99
Kurşunsuz
Lead Free
Collector Base Voltage Vcbo
65V
Dc Current Gain Hfe Min Ic Vce
20 @ 1.5A 5V
Additional Feature
HIGH RELIABILITY
Fabrika Tedarik Süresi
20 Weeks
Collector Emitter Voltage Vceo
35V
Parça Durumu
Active
Min. Çalışma Sıcaklığı
-65°C
Element Configuration
Single
Max Power Dissipation
82W
Collectoremitter Breakdown Voltage
35V
Montaj Tipi
Chassis Mount
Terminal Formu
FLAT
Max Collector Current
3.4A
Continuous Collector Current
3.4A
RoHS Durumu
ROHS3 Compliant
Kılıf / Paket
211-07
Terminal Sayısı
4
Maks. Çalışma Sıcaklığı
150°C
Yayın Yılı
2009
Emitter Base Voltage Vebo
4V
Number Of Elements
1
Ambalaj
Tray
Terminal Pozisyonu
RADIAL
Nem Hassasiyeti (MSL)
1 (Unlimited)
Pin Sayısı
4
Hfemin
20
Polaritychannel Type
NPN
Pin Sayısı
4
Transistor Application
AMPLIFIER
Montaj
Chassis Mount, Screw
Frekans
200MHz
Gain
13.5dB
Transistor Type
NPN
Output Power
30W
Radyasyon Dayanımı
No

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