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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- NPN
- Frekans
- 1.15GHz
- Polaritychannel Type
- NPN
- Collector Emitter Voltage Vceo
- 65V
- Montaj Tipi
- Chassis Mount
- Montaj
- Chassis Mount, Screw
- Max Power Dissipation
- 1.46kW
- Max Collector Current
- 29A
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 5A 5V
- Yayın Yılı
- 2009
- RoHS Durumu
- ROHS3 Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Emitter Base Voltage Vebo
- 3.5V
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 20 Weeks
- Power Max
- 500W
- Ambalaj
- Tray
- Element Configuration
- Single
- Additional Feature
- WITH EMITTER BALLASTING RESISTOR
- Kılıf / Paket
- 355J-02
- Case Connection
- BASE
- Gain
- 9dB
- Collectoremitter Breakdown Voltage
- 65V
- Çalışma Sıcaklığı
- 200°C TJ
- Collector Base Voltage Vcbo
- 65V
- Terminal Sayısı
- 2
- Terminal Pozisyonu
- DUAL
- Hfemin
- 20
- Number Of Elements
- 1
- Transistor Application
- AMPLIFIER
- Jesd30 Code
- R-CDFM-F2
- Continuous Collector Current
- 29A
- Terminal Formu
- FLAT
- Pin Sayısı
- 2
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
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