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MRF10350

M/A-Com Technology Solutions

MRF10350

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Highest Frequency Band
L B
Jesd30 Code
R-CDFM-F2
Pin Sayısı
3
Pin Sayısı
2
Terminal Formu
FLAT
Kurşunsuz Kodu
yes
Gain
9dB
Collectoremitter Breakdown Voltage
65V
Case Connection
BASE
Number Of Elements
1
Transistor Application
AMPLIFIER
Çalışma Sıcaklığı
200°C TJ
Terminal Pozisyonu
DUAL
Terminal Sayısı
2
Collector Base Voltage Vcbo
65V
Parça Durumu
Active
Fabrika Tedarik Süresi
14 Weeks
Power Max
350W
RoHS Durumu
ROHS3 Compliant
Qualification Status
Not Qualified
Transistor Element Material
SILICON
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kılıf / Paket
355E-01
Configuration
SINGLE
Ambalaj
Tray
Additional Feature
WITH EMITTER BALLASTING RESISTOR
Collector Emitter Voltage Vceo
65V
Montaj
Chassis Mount
Montaj Tipi
Chassis Mount
Transistor Type
NPN
Polaritychannel Type
NPN
Dc Current Gain Hfe Min Ic Vce
20 @ 5A 5V
Yayın Yılı
2016
Max Collector Current
31A
Max Power Dissipation
350W

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