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MAPRST0912-50

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MAPRST0912-50

RF BJT Transistors

RoHS: Compliant

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Specifications

Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Parça Durumu
Active
Kurşunsuz Kodu
yes
Configuration
SINGLE
Transistor Element Material
SILICON
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Max Collector Current
5.3A
Fabrika Tedarik Süresi
28 Weeks
Transistor Type
NPN
RoHS Durumu
ROHS3 Compliant
Çalışma Sıcaklığı
200°C TJ
Yayın Yılı
2009
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gain
10.16dB ~ 10.25dB
Number Of Elements
1
Case Connection
BASE
Collectoremitter Breakdown Voltage
65V
Qualification Status
Not Qualified
Highest Frequency Band
L B
Terminal Sayısı
2
Currentcollector Ic Max
5.3A
Terminal Pozisyonu
DUAL
Max Power Dissipation
50W
Pin Sayısı
2
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Transistor Application
AMPLIFIER
Ambalaj
Tray
Montaj Tipi
Chassis Mount
Terminal Formu
FLAT
Montaj
Chassis Mount
Polaritychannel Type
NPN
Jesd30 Code
R-CDFM-F2

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