Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- Ceramic
- Terminal Sayısı
- 2
- Frekans
- 1.215GHz
- Pin Sayısı
- 2
- Max Power Dissipation
- 350W
- Terminal Pozisyonu
- DUAL
- Continuous Collector Current
- 32.5A
- Transistor Application
- AMPLIFIER
- Additional Feature
- WITH EMITTER BALLASTING RESISTORS
- Montaj Tipi
- Chassis Mount
- Terminal Formu
- FLAT
- Jesd30 Code
- R-CDFM-F2
- Polaritychannel Type
- NPN
- Montaj
- Chassis Mount
- Ambalaj
- Tray
- Collectoremitter Breakdown Voltage
- 65V
- Case Connection
- BASE
- Number Of Elements
- 1
- Gain
- 9.4dB
- Qualification Status
- Not Qualified
- Fabrika Tedarik Süresi
- 28 Weeks
- Max Collector Current
- 32.5A
- RoHS Durumu
- ROHS3 Compliant
- Transistor Type
- NPN
- Yayın Yılı
- 2009
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- 200°C TJ
- Emitter Base Voltage Vebo
- 3V
- Kurşunsuz Kodu
- yes
- Parça Durumu
- Active
- Element Configuration
- Single
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Element Material
- SILICON
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Collector Emitter Voltage Vceo
- 65V
Related Products
Microsemi Corporation
0204-125
RF BJT Transistors
Microsemi Corporation
0510-50A
RF BJT Transistors
HARTING
09022326834
RF BJT Transistors
HARTING
09023646919
RF BJT Transistors
HARTING
09030006246
RF BJT Transistors
HARTING
09030006247
RF BJT Transistors
HARTING
09031466903
RF BJT Transistors
HARTING
09032322850222
RF BJT Transistors