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MAPR-002731-115M00

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MAPR-002731-115M00

RF BJT Transistors

RoHS: Compliant

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Specifications

Terminal Pozisyonu
DUAL
Max Power Dissipation
115W
Pin Sayısı
2
Terminal Sayısı
2
Ambalaj
Tray
Jesd30 Code
R-CDFM-F2
Polaritychannel Type
NPN
Montaj
Chassis Mount
Terminal Formu
FLAT
Montaj Tipi
Chassis Mount
Transistor Application
AMPLIFIER
Qualification Status
Not Qualified
Highest Frequency Band
S B
Gain
8.06dB ~ 8.45dB
Number Of Elements
1
Case Connection
BASE
Collectoremitter Breakdown Voltage
65V
Transistor Type
NPN
RoHS Durumu
RoHS Compliant
ECCN Kodu
EAR99
Çalışma Sıcaklığı
200°C TJ
Yayın Yılı
2009
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Obsolete
Power Max
115W
Configuration
SINGLE
Transistor Element Material
SILICON

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