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MAPR-000912-500S00

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MAPR-000912-500S00

RF BJT Transistors

RoHS: Compliant

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Specifications

Fabrika Tedarik Süresi
28 Weeks
Max Collector Current
52.5A
Transistor Type
NPN
RoHS Durumu
ROHS3 Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2009
Çalışma Sıcaklığı
200°C TJ
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Kurşunsuz Kodu
yes
Parça Durumu
Active
Transistor Element Material
SILICON
Configuration
SINGLE
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Currentcollector Ic Max
52.5A
Terminal Sayısı
2
Terminal Pozisyonu
DUAL
Pin Sayısı
2
Max Power Dissipation
500W
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Transistor Application
AMPLIFIER
Ambalaj
Tray
Montaj Tipi
Chassis Mount
Terminal Formu
FLAT
Jesd30 Code
R-CDFM-F2
Polaritychannel Type
NPN
Montaj
Chassis Mount
Number Of Elements
1
Gain
9.44dB ~ 9.77dB
Collectoremitter Breakdown Voltage
80V
Case Connection
BASE
Highest Frequency Band
L B
Qualification Status
Not Qualified

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