IXTH4N150

Specifications

Pin Sayısı

3

Gate Charge Qg Max Vgs

44.5 nC @ 10 V

Input Capacitance Ciss Max Vds

1576 pF @ 25 V

Kılıf / Paket

TO-247-3

Additional Feature

AVALANCHE RATED

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

6Ohm

Temel Ürün No

IXTH4

Ambalaj

Tube

Rds On Max Id Vgs

6Ohm @ 2A, 10V

Montaj Tipi

Through Hole

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Yayın Yılı

2012

Drain To Source Voltage Vdss

1500 V

Pulsed Drain Currentmax Idm

12A

Current Continuous Drain Id25

4A (Tc)

Parça Durumu

Active

Number Of Elements

1

Fabrika Tedarik Süresi

3 Weeks

Vgsth Max Id

5V @ 250µA

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation Max

280W (Tc)

Avalanche Energy Rating Eas

350 mJ

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Drain Currentmax Abs Id

4A

Jesd30 Code

R-PSFM-T3

Tedarikçi Cihaz Paketi

TO-247 (IXTH)

Vgs Max

±30V

Transistor Application

SWITCHING

Montaj

Through Hole

Qualification Status

Not Qualified

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

4A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

1500V