VMO650-01F

Specifications

Process Technology

HiperFET

Typical Fall Time Ns

200

Maximum Drain Source Voltage V

100

Ppap

Unknown

Minimum Operating Temperature C

-40

Configuration

Single Dual Source

Automotive

Unknown

Parça Durumu

LTB

Pin Sayısı

4

Typical Gate Charge Vgs Nc

2300@10V

Typical Turnoff Delay Time Ns

800

Package Width

62

Maximum Drain Source Resistance Mohm

1.8@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

690

Pcb Changed

4

Channel Type

N

Eccn Us

EAR99

Package Height

30

Typical Gate Charge10v Nc

2300

Mounting

Screw

Package Length

110

Typical Turnon Delay Time Ns

250

Category

Power MOSFET

Typical Rise Time Ns

500

Maximum Gate Source Voltage V

±20

Typical Input Capacitance Vds Pf

59000@25V

Number Of Elements Per Chip

1

Eu Rohs

Compliant

Maximum Power Dissipation Mw

2500000

Hts

8541.29.00.95

Supplier Package

Y3-DCB

Maximum Operating Temperature C

150