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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz Kodu
- yes
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Sayısı
- 9
- Rds On Max Id Vgs
- 76m Ω @ 65A, 10V
- Hts
- 8541.29.00.95
- Yayın Yılı
- 2005
- Number Of Elements Per Chip
- 2
- Fet Feature
- Standard
- Eccn Us
- EAR99
- Typical Rise Time Ns
- 180
- Radyasyon Dayanımı
- No
- Montaj
- Chassis Mount, Screw
- Kurşunsuz
- Lead Free
- Temel Parça No
- VMM
- Pin Sayısı
- 9
- Maximum Continuous Drain Current A
- 85
- Channel Mode
- Enhancement
- Vgsth Max Id
- 5V @ 30mA
- Seri
- HiPerFET™
- Package Width
- 62
- Typical Gate Charge Vgs Nc
- 960@10V
- Terminal Formu
- UNSPECIFIED
- Number Of Elements
- 2
- Drain To Source Voltage Vdss
- 900V
- Pcb Changed
- 9
- Channel Type
- N
- Fabrika Tedarik Süresi
- 28 Weeks
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- 2 N-Channel (Dual)
- Typical Fall Time Ns
- 140
- Process Technology
- HiperFET
- Ppap
- No
- Maximum Drain Source Voltage V
- 900
- Drainsource On Resistancemax
- 0.076Ohm
- Parça Durumu
- LTB
- Pin Sayısı
- 9
- Configuration
- Dual
- Automotive
- No
- Maximum Gate Source Voltage V
- ±20
- Gate To Source Voltage Vgs
- 20V
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