MTI200WX75GD-SMD

Specifications

Number Of Elements Per Chip

6

Typical Turnoff Delay Time Ns

510

Package Length

37.5

Maximum Drain Source Voltage V

75

Pin Sayısı

24

Ambalaj

Blister

Typical Gate Charge10v Nc

155

Maximum Drain Source Resistance Mohm

1.3@10V

Maximum Continuous Drain Current A

255

Process Technology

TMOS

Typical Rise Time Ns

70

Channel Mode

Enhancement

Maximum Idss Ua

1

Channel Type

N

Standard Package Name

DIP

Maximum Gate Source Leakage Current Na

500

Typical Turnon Delay Time Ns

150

Configuration

Hex

Maximum Gate Threshold Voltage V

3.8

Maximum Gate Source Voltage V

±15

Typical Input Capacitance Vds Pf

10800@37.5V

Eccn Us

EAR99

Package Height

5

Typical Gate Charge Vgs Nc

155@10V

Automotive

Unknown

Supplier Package

ISOPLUS-DIL

Maximum Operating Temperature C

175

Package Width

25

Typical Fall Time Ns

50

Pcb Changed

24

Mounting

Surface Mount

Lead Shape

Gull-wing

Minimum Operating Temperature C

-55

Ppap

Unknown

Eu Rohs

Compliant