MMIX1F44N100Q3

Specifications

Maximum Drain Source Resistance Mohm

245@10V

Process Technology

HiperFET

Package Height

5.55(Max)

Typical Gate Charge Vgs Nc

264@10V

Maximum Gate Source Leakage Current Na

200

Package Length

25.25(Max)

Typical Turnoff Delay Time Ns

66

Package Width

23.25(Max)

Mounting

Surface Mount

Number Of Elements Per Chip

1

Maximum Gate Source Voltage V

±30

Pin Sayısı

21

Supplier Package

SMPD

Category

Power MOSFET

Typical Rise Time Ns

30

Operating Junction Temperature C

150

Maximum Drain Source Voltage V

1000

Typical Turnon Delay Time Ns

48

Maximum Idss Ua

50

Minimum Operating Temperature C

-55

Parça Durumu

Active

Maximum Continuous Drain Current A

30

Pcb Changed

21

Ppap

No

Channel Mode

Enhancement

Configuration

Single

Automotive

No

Typical Input Capacitance Vds Pf

13600@25V

Channel Type

N

Maximum Operating Temperature C

150

Typical Gate Charge10v Nc

264

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

28

Maximum Gate Threshold Voltage V

6.5

Maximum Power Dissipation Mw

694000