MMIX1F40N110P

Specifications

Package Width

23.25(Max)

Mounting

Surface Mount

Package Length

25.25(Max)

Eccn Us

EAR99

Typical Turnoff Delay Time Ns

110

Transistor Polarity

N-Channel

Typical Gate Charge Vgs Nc

310@10V

Maximum Gate Source Leakage Current Na

200

Id Continuous Drain Current

24 A

Package Height

5.55(Max)

Process Technology

HiperFET

Maximum Drain Source Resistance Mohm

290@10V

Seri

MMIX1F40N110

Typical Rise Time Ns

55

Supplier Package

SMPD-X

Category

Power MOSFET

Kılıf / Paket

SMPD-24

Maximum Gate Source Voltage V

±30

Pin Sayısı

21

Number Of Elements Per Chip

1

Configuration

Single

Ppap

No

Channel Mode

Enhancement

Technology

Si

Pcb Changed

21

Maximum Continuous Drain Current A

24

Parça Durumu

Active

Maximum Idss Ua

50

Rds On Drainsource Resistance

290 mOhms

Minimum Operating Temperature C

-55

Montaj Stili

SMD/SMT

Maximum Drain Source Voltage V

1100

Typical Turnon Delay Time Ns

53

Vds Drainsource Breakdown Voltage

1.1 kV

Maximum Power Dissipation Mw

500000

Maximum Gate Threshold Voltage V

6.5

Typical Fall Time Ns

54

Eu Rohs

Compliant

Maximum Operating Temperature C

150

Typical Gate Charge10v Nc

310