MMIX1F360N15T2

Specifications

Category

Power MOSFET

Qg Gate Charge

715 nC

Maximum Gate Source Voltage V

±20

Pin Sayısı

21

Package Height

5.55(Max)

Id Continuous Drain Current

235 A

Typical Gate Charge Vgs Nc

715@10V

Maximum Gate Source Leakage Current Na

200

Typical Gate Charge10v Nc

715

Eu Rohs

Compliant

Maximum Power Dissipation Mw

680000

Channel Type

N

Maximum Continuous Drain Current A

235

Technology

Si

Minimum Operating Temperature C

-55

Vgs Gatesource Voltage

- 20 V, + 20 V

Supplier Package

SMPD-X

Typical Rise Time Ns

170

Vgs Th Gatesource Threshold Voltage

5 V

Number Of Elements Per Chip

1

Maks. Çalışma Sıcaklığı

+ 175 C

Pd Power Dissipation

680 W

Kılıf / Paket

SMPD-24

Transistor Polarity

N-Channel

Package Length

25.25(Max)

Eccn Us

EAR99

Typical Turnoff Delay Time Ns

115

Package Width

23.25(Max)

Mounting

Surface Mount

Seri

MMIX1F360N15

Maximum Drain Source Resistance Mohm

4.4@10V

Process Technology

HiperFET

Maximum Operating Temperature C

175

Typical Fall Time Ns

265

Minimum Operating Temperature

- 55 C

Maximum Gate Threshold Voltage V

5

Standard Package Name

SMD

Automotive

No

Typical Input Capacitance Vds Pf

47500@25V

Pcb Changed

21