MMIX1F230N20T

Specifications

Typical Rise Time Ns

38

Supplier Package

SMPD-X

Category

Power MOSFET

Maximum Gate Source Voltage V

±20

Pin Sayısı

21

Number Of Elements Per Chip

1

Package Width

23.25(Max)

Mounting

Surface Mount

Package Length

25.25(Max)

Eccn Us

EAR99

Typical Turnoff Delay Time Ns

62

Typical Gate Charge Vgs Nc

358@10V

Maximum Gate Source Leakage Current Na

200

Package Height

5.55(Max)

Process Technology

HiperFET

Maximum Drain Source Resistance Mohm

8.3@10V

Maximum Power Dissipation Mw

600000

Maximum Gate Threshold Voltage V

5

Typical Fall Time Ns

17

Eu Rohs

Compliant

Typical Gate Charge10v Nc

358

Maximum Operating Temperature C

175

Channel Type

N

Typical Input Capacitance Vds Pf

24000@25V

Standard Package Name

SMD

Automotive

No

Configuration

Single

Channel Mode

Enhancement

Ppap

No

Pcb Changed

21

Maximum Continuous Drain Current A

156

Parça Durumu

Active

Maximum Idss Ua

50

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

200

Typical Turnon Delay Time Ns

58