MMIX1F180N25T

Specifications

Number Of Elements Per Chip

1

Pin Sayısı

21

Maximum Gate Source Voltage V

±20

Typical Rise Time Ns

52

Category

Power MOSFET

Supplier Package

SMPD-X

Maximum Drain Source Resistance Mohm

13@10V

Process Technology

HiperFET

Typical Turnoff Delay Time Ns

88

Eccn Us

EAR99

Package Length

25.25(Max)

Mounting

Surface Mount

Package Width

23.25(Max)

Package Height

5.55(Max)

Maximum Gate Source Leakage Current Na

200

Typical Gate Charge Vgs Nc

364@10V

Typical Input Capacitance Vds Pf

23800@25V

Channel Type

N

Automotive

No

Standard Package Name

SMD

Maximum Gate Threshold Voltage V

5

Maximum Power Dissipation Mw

570000

Maximum Operating Temperature C

150

Typical Gate Charge10v Nc

364

Typical Fall Time Ns

20

Eu Rohs

Compliant

Minimum Operating Temperature C

-55

Maximum Idss Ua

50

Parça Durumu

Active

Typical Turnon Delay Time Ns

35

Maximum Drain Source Voltage V

250

Ppap

No

Channel Mode

Enhancement

Configuration

Single Triple Source

Maximum Continuous Drain Current A

132

Pcb Changed

21