MMIX1F160N30T

Specifications

Package Height

5.55(Max)

Id Continuous Drain Current

102 A

Typical Gate Charge Vgs Nc

376@10V

Maximum Gate Source Leakage Current Na

200

Qg Gate Charge

376 nC

Maximum Gate Source Voltage V

±20

Pin Sayısı

21

Category

Power MOSFET

Minimum Operating Temperature C

-55

Vgs Gatesource Voltage

- 20 V, + 20 V

Maximum Continuous Drain Current A

102

Technology

Si

Channel Type

N

Typical Gate Charge10v Nc

376

Eu Rohs

Compliant with Exemption

Maximum Power Dissipation Mw

570000

Maximum Drain Source Resistance Mohm

20@10V

Process Technology

HiperFET

Transistor Polarity

N-Channel

Package Length

25.25(Max)

Typical Turnoff Delay Time Ns

90

Package Width

23.25(Max)

Mounting

Surface Mount

Vgs Th Gatesource Threshold Voltage

3 V

Number Of Elements Per Chip

1

Maks. Çalışma Sıcaklığı

+ 150 C

Pd Power Dissipation

570 W

Kılıf / Paket

SMPD-24

Supplier Package

SMPD

Typical Rise Time Ns

68

Number Of Channels

1 Channel

Hts

8541.29.00.95

Vds Drainsource Breakdown Voltage

300 V

Maximum Drain Source Voltage V

300

Typical Turnon Delay Time Ns

34

Rds On Drainsource Resistance

20 mOhms

Maximum Idss Ua

50

Montaj Stili

SMD/SMT

Parça Durumu

Active

Pcb Changed

21