MCB60I1200TZ-TUB

Specifications

Tab

Tab

Maximum Gate Source Voltage V

20

Vgs Gatesource Voltage

- 20 V, + 20 V

Ürün Tipi

Discrete Semiconductor Modules

Package Width

14(Max)

Number Of Elements Per Chip

1

Mounting

Surface Mount

Parça Durumu

Active

Kılıf / Paket

TO-268AA-3

Pcb Changed

2

Package Length

16.05(Max)

Rds On Drainsource Resistance

34 mOhms

Ambalaj

Tube

Maximum Operating Temperature C

150

Tip

Half Bridge Module

Technology

SiC

Category

Power MOSFET

Maximum Drain Source Resistance Mohm

34@20V

Configuration

Single

Eccn Us

EAR99

Maximum Drain Source Voltage V

1200

Supplier Package

D3PAK-HV

Maks. Çalışma Sıcaklığı

+ 150 C

Pin Sayısı

3

Material

SiC

Typical Gate Charge Vgs Nc

160@20V

Channel Type

N

Minimum Operating Temperature C

-40

Ppap

No

Eu Rohs

Compliant

Minimum Operating Temperature

- 40 C

Montaj Stili

SMD/SMT

Channel Mode

Enhancement

Typical Input Capacitance Vds Pf

2790@1000V

Maximum Continuous Drain Current A

90

Package Height

5.1(Max)

Automotive

No