Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 6800pF @ 100V
- Fabrika Tedarik Süresi
- 32 Weeks
- Maximum Operating Temperature C
- 150
- Additional Feature
- AVALANCHE RATED
- Case Connection
- ISOLATED
- Pcb Changed
- 5
- Maximum Continuous Drain Current A
- 47
- Package Length
- 20.29(Max)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Number Of Elements Per Chip
- 2
- Continuous Drain Current Id
- 47A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 20ns
- Gate To Source Voltage Vgs
- 20V
- Montaj
- Through Hole
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Terminal Sayısı
- 5
- Fet Feature
- Super Junction
- Minimum Operating Temperature C
- -55
- Fall Time Typ
- 10 ns
- JESD-609 Kodu
- e1
- Transistor Element Material
- SILICON
- Typical Gate Charge10v Nc
- 150
- Kurşunsuz Kodu
- yes
- Power Dissipation
- 480W
- Seri
- CoolMOS™
- Pin Sayısı
- 5
- Process Technology
- CoolMOS
- Eu Rohs
- Compliant
- Hts
- 8542.39.00.01
- Maximum Gate Source Voltage V
- ±20
- Pin Sayısı
- 5
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Tab
- Tab
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 600V
- Package Width
- 5.21(Max)
- Eccn Us
- EAR99
- Rds On Max Id Vgs
- 45m Ω @ 44A, 10V
- Drain To Source Breakdown Voltage
- 600V
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