Volume pricing
- 1+ pcs$6.59
- 10+ pcs$6.21
- 100+ pcs$5.86
- 500+ pcs$5.53
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Typical Collector Emitter Saturation Voltage V
- 1.5
- Transistor Element Material
- SILICON
- Case Connection
- COLLECTOR
- Operating Temperature Max
- 175C
- Mounting
- Through Hole
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Package Width
- 5.3(Max)
- Gateemitter Thr Voltagemax
- 5.5V
- Terminal Pozisyonu
- SINGLE
- Tab
- Tab
- Pcb Changed
- 3
- Automotive
- No
- Number Of Elements
- 1
- Collectoremitter Saturation Voltage
- 1.8V
- Maximum Gate Emitter Voltage V
- ±20
- Ppap
- No
- Td Onoff25c
- 30ns/120ns
- Additional Feature
- AVALANCHE RATED
- Package Length
- 16.26(Max)
- Eu Rohs
- Compliant with Exemption
- Collectoremitter Breakdown Voltage
- 600V
- Current Collector Pulsed Icm
- 480A
- Power Dissipation
- 830W
- Channel Type
- N
- Svhc
- Yes
- Max Power Dissipation
- 830W
- Max Collector Current
- 220A
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Gate Charge
- 143nC
- Polaritychannel Type
- N-CHANNEL
- Maximum Power Dissipation Mw
- 830
- Transistor Application
- POWER CONTROL
- Minimum Operating Temperature C
- -55
- Kılıf / Paket
- TO-247-3
- Ambalaj
- Tube
- Collector Emitter Voltage Vceo
- 1.8V
- Seri
- GenX3™, XPT™
- Switching Energy
- 1.9mJ (on), 2mJ (off)
- Terminal Sayısı
- 3
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