IXTZ550N055T2

Specifications

Material

Si

Maximum Drain Source Resistance Mohm

1@10V

Minimum Operating Temperature C

-55

Package Height

3.18

Maximum Power Dissipation Mw

600000

Typical Gate Charge10v Nc

595

Maximum Continuous Drain Current A

550

Channel Type

N

Pin Sayısı

6

Configuration

Single Triple Drain Dual Source

Typical Turnoff Delay Time Ns

90

Typical Fall Time Ns

230

Maximum Operating Temperature C

175

Typical Rise Time Ns

40

Package Length

21.08

Parça Durumu

Active

Eu Rohs

Compliant

Ppap

No

Maximum Gate Source Voltage V

±20

Mounting

Surface Mount

Typical Turnon Delay Time Ns

45

Category

Power MOSFET

Maximum Drain Source Voltage V

55

Typical Input Capacitance Vds Pf

40000@25V

Automotive

No

Channel Mode

Enhancement

Package Width

23.11

Number Of Elements Per Chip

1

Typical Gate Charge Vgs Nc

595@10V

Pcb Changed

6

Supplier Package

Case DE-475