IXTY8N65X2

Specifications

Typical Fall Time Ns

24

Maximum Operating Temperature C

150

Typical Rise Time Ns

28

Eccn Us

EAR99

Ppap

No

Package Length

6.73(Max)

Eu Rohs

Compliant

Parça Durumu

Active

Maximum Gate Source Leakage Current Na

100

Category

Power MOSFET

Typical Turnon Delay Time Ns

24

Mounting

Surface Mount

Maximum Gate Source Voltage V

±30

Pcb Changed

2

Typical Gate Charge Vgs Nc

12@10V

Number Of Elements Per Chip

1

Tab

Tab

Supplier Package

DPAK

Package Width

6.22(Max)

Channel Mode

Enhancement

Automotive

No

Typical Input Capacitance Vds Pf

800@25V

Maximum Drain Source Voltage V

650

Maximum Power Dissipation Mw

150000

Maximum Drain Source Resistance Mohm

500@10V

Maximum Gate Threshold Voltage V

5

Minimum Operating Temperature C

-55

Package Height

2.4(Max)

Maximum Continuous Drain Current A

8

Typical Gate Charge10v Nc

12

Pin Sayısı

3

Channel Type

N

Typical Turnoff Delay Time Ns

53

Maximum Idss Ua

10

Configuration

Single