IXTY4N65X2-TRL

Specifications

Technology

Si

Rds On Drainsource Resistance

850 mOhms

Ambalaj

Tape and Reel

Maximum Continuous Drain Current A

4

Maximum Drain Source Resistance Mohm

850@10V

Maximum Gate Threshold Voltage V

5

Kılıf / Paket

TO-252-3

Package Height

2.4(Max)

Minimum Operating Temperature C

-55

Vds Drainsource Breakdown Voltage

650 V

Maximum Power Dissipation Mw

80000

Id Continuous Drain Current

4 A

Configuration

Single

Transistor Polarity

N-Channel

Typical Turnoff Delay Time Ns

57

Maximum Idss Ua

5

Channel Type

N

Montaj Stili

SMD/SMT

Pin Sayısı

3

Eu Rohs

Compliant

Parça Durumu

Active

Package Length

6.73(Max)

Pd Power Dissipation

80 W

Ppap

No

Vgs Gatesource Voltage

- 30 V, + 30 V

Vgs Th Gatesource Threshold Voltage

3 V

Eccn Us

EAR99

Typical Fall Time Ns

25

Minimum Operating Temperature

- 55 C

Typical Rise Time Ns

28

Maximum Operating Temperature C

150

Channel Mode

Enhancement

Automotive

No

Typical Input Capacitance Vds Pf

455@25V

Maximum Drain Source Voltage V

650

Tab

Tab

Number Of Elements Per Chip

1

Pcb Changed

2

Supplier Package

DPAK

Package Width

6.22(Max)