IXTY32P05T

Specifications

Typical Input Capacitance Vds Pf

1975@25V

Maximum Drain Source Voltage V

50

Channel Mode

Enhancement

Automotive

No

Package Width

6.3(Max)

Tab

Tab

Number Of Elements Per Chip

1

Typical Gate Charge Vgs Nc

46@10V

Pcb Changed

2

Supplier Package

DPAK

Hts

8541.29.00.95

Maximum Gate Source Voltage V

±15

Mounting

Surface Mount

Typical Turnon Delay Time Ns

20

Standard Package Name

TO-252

Category

Power MOSFET

Package Length

6.8(Max)

Parça Durumu

Active

Eu Rohs

Compliant with Exemption

Ppap

No

Eccn Us

EAR99

Typical Fall Time Ns

27

Typical Rise Time Ns

28

Maximum Operating Temperature C

150

Configuration

Single

Transistor Polarity

P-Channel

Typical Turnoff Delay Time Ns

39

Channel Type

P

Lead Shape

Gull-wing

Pin Sayısı

3

Montaj Stili

SMD/SMT

Typical Gate Charge10v Nc

46

Process Technology

TrenchP

Seri

IXTY32P05

Technology

Si

Rds On Drainsource Resistance

39 mOhms

Maximum Continuous Drain Current A

32

Vds Drainsource Breakdown Voltage

50 V

Maximum Drain Source Resistance Mohm

39@10V

Minimum Operating Temperature C

-55