IXTY26P10T-TRL

Specifications

Pin Sayısı

3

Ürün Tipi

Discrete Semiconductor Modules

Configuration

Single

Package Height

2.4(Max)

Maximum Drain Source Resistance Mohm

90@10V

Technology

Si

Rds On Drainsource Resistance

90 mOhms

Category

Power MOSFET

Tip

TrenchP

Hts

8541.29.00.95

Supplier Package

DPAK

Maximum Operating Temperature C

150

Typical Rise Time Ns

15

Typical Fall Time Ns

11

Minimum Operating Temperature

- 55 C

Rise Time

15 ns

Eccn Us

EAR99

Vgs Gatesource Voltage

15 V

Parça Durumu

Active

Montaj Stili

SMD/SMT

Channel Type

P

Typical Turnoff Delay Time Ns

37

Maximum Idss Ua

10

Maximum Power Dissipation Mw

150000

Minimum Operating Temperature C

-55

Kılıf / Paket

TO-252-3

Maximum Gate Threshold Voltage V

4.5

Ambalaj

Tape and Reel

Maximum Continuous Drain Current A

26

Typical Gate Charge10v Nc

52

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Gate Source Leakage Current Na

50

Typical Turnon Delay Time Ns

20

Mounting

Surface Mount

Typical Turnon Delay Time

20 ns

Maximum Gate Source Voltage V

±15

Pcb Changed

2

Typical Gate Charge Vgs Nc

52@10V

Number Of Elements Per Chip

1

Tab

Tab