IXTY1R4N120PHV

Specifications

Maximum Power Dissipation Mw

86000

Typical Gate To Drain Charge Nc

12.8

Typical Reverse Transfer Capacitance Vds Pf

7.6@25V

Typical Reverse Recovery Time Ns

900

Maximum Drain Source Resistance Mohm

13000@10V

Maximum Gate Threshold Voltage V

4.5

Minimum Operating Temperature C

-55

Package Height

2.39(Max)

Maximum Continuous Drain Current A

1.4

Typical Gate Charge10v Nc

24.8

Process Technology

Polar

Maximum Diode Forward Voltage V

1.5

Pin Sayısı

3

Channel Type

N

Typical Turnoff Delay Time Ns

78

Maximum Idss Ua

5

Typical Gate To Source Charge Nc

4.4

Configuration

Single

Typical Fall Time Ns

29

Typical Rise Time Ns

27

Maximum Operating Temperature C

150

Typical Gate Plateau Voltage V

4.75

Maximum Positive Gate Source Voltage V

30

Eccn Us

EAR99

Ppap

No

Package Length

6.73(Max)

Eu Rohs

Compliant with Exemption

Parça Durumu

Active

Maximum Gate Source Leakage Current Na

100

Minimum Gate Threshold Voltage V

2.5

Category

Power MOSFET

Typical Turnon Delay Time Ns

25

Standard Package Name

TO-252

Operating Junction Temperature C

150

Maximum Pulsed Drain Current Tc25c A

3

Mounting

Surface Mount

Maximum Gate Source Voltage V

±30

Pcb Changed

2

Typical Gate Charge Vgs Nc

24.8@10V

Number Of Elements Per Chip

1